产品概述/Product Introduction：
本设备主要用于氧化镓（Ga2O3）单晶生长（无铱法），将原料放在垂直的坩埚内， 然后从坩埚顶部开始通过预设好的温度梯度区作定向凝固。通过缓慢降温而生长出单晶。
This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling.
提供2英寸验证工艺
Provide 2 inches validation process.
产品特点/Product Characteristics：
♦产量: 2-6英寸 Capacity:2-6 inches
♦极限温度: 1850℃ Maximum temperature: 1850°C
♦加热方式: 电阻/RF Heating method: Resistance heating/RF heating
♦自动化: 全自动化（除装取料外） Automation:Full automation (except loading and unloading)
♦气路: 3 路 Air Circuit: 3 ways
♦衬底: 2英寸 Substrate: 2 inches
♦单晶: 2英寸 高度: 30mm Single crystal: 2 inches Height: 30mm
♦纯单晶，没有杂质，电学性能不做保证 Pure single crystal, no impurities, electrical properties are not guaranteed